Atomic layers of hybridized boron nitride and graphene domains
Atomic layers of hybridized boron nitride and graphene domains
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DOI：
10.1038/nmat2711
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发表时间：
2010-05-01
期刊：
影响因子：
41.2
通讯作者：
Ajayan, Pulickel M.
中科院分区：
文献类型：
--
作者：
Ci, Lijie;Song, Li;Ajayan, Pulickel M.
二维材料，如石墨烯和单层六方氮化硼（h-BN），是有吸引力的，以展示材料中的基础物理和下一代电子产品中的潜在应用。含有涉及元素B、N和C在宽组成范围内的杂化键的原子片可以产生具有与石墨烯和h-BN的那些性质互补的性质的新材料，从而实现丰富多样的电子结构、性质和应用。在这里，我们报告的大面积的h-BNC材料的原子层的合成和表征，由杂化的，随机分布的h-BN和C相的组成范围从纯BN到纯石墨烯的域。我们的研究表明，它们的结构特征和带隙不同于石墨烯，掺杂石墨烯和h-BN。这种新形式的混合h-BNC材料能够开发电子和光学中的带隙工程应用，以及与石墨烯和h-BN不同的特性。
Two-dimensional materials, such as graphene and monolayer hexagonal BN (h-BN), are attractive for demonstrating fundamental physics in materials and potential applications in next-generation electronics. Atomic sheets containing hybridized bonds involving elements B, N and C over wide compositional ranges could result in new materials with properties complementary to those of graphene and h-BN, enabling a rich variety of electronic structures, properties and applications. Here we report the synthesis and characterization of large-area atomic layers of h-BNC material, consisting of hybridized, randomly distributed domains of h-BN and C phases with compositions ranging from pure BN to pure graphene. Our studies reveal that their structural features and bandgap are distinct from those of graphene, doped graphene and h-BN. This new form of hybrid h-BNC material enables the development of bandgap-engineered applications in electronics and optics and properties that are distinct from those of graphene and h-BN.