Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO 3 buffer layer
Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO 3 buffer layer
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DOI：
10.1088/1674-1056/21/11/117307
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发表时间：
2012-11
影响因子：
1.7
通讯作者：
Xinge Yu;Jun Yu;Wei Huang;Hong-juan Zeng
中科院分区：
文献类型：
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作者：
Xinge Yu;Jun Yu;Wei Huang;Hong-juan Zeng
采用并五苯/1,1'-双(二-4-甲苯氨基苯基)环己烷(TAPC)异质结结构并在TAPC有机半导体层和源/漏电极之间插入MoO3缓冲层制备了顶接触有机场效应晶体管(OFET)。通过引入 MoO3 薄缓冲层，异质结 OFET 的性能（包括输出电流、场效应迁移率和阈值电压）均得到显着改善。改性异质结OFET性能的提高归因于MoO3薄缓冲层在Au/TAPC界面处形成了更好的接触，从而导致金属/有机界面处的接触电阻显着降低。
A top-contact organic field-effect transistor (OFET) is fabricated by adopting a pentacene/1,1'-bis(di-4-tolylaminophenyl) cyclohexane (TAPC) heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage, are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.