Influence of the hydrogen implantation power density on ion cutting of Ge
Influence of the hydrogen implantation power density on ion cutting of Ge
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DOI：
10.1116/1.4817756
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发表时间：
2013-08
期刊：
影响因子：
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通讯作者：
Y. Ruan;Wang Lin;Songyan Chen;Cheng Li;H. Lai;Wei Huang;Jun Li
中科院分区：
文献类型：
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作者：
Y. Ruan;Wang Lin;Songyan Chen;Cheng Li;H. Lai;Wei Huang;Jun Li
本研究以不同注入功率密度对锗晶圆进行氢离子注入后，其表面形貌、应变状态及缺陷演化进行研究。在较低的注入功率密度下，氢注入在Ge晶格中产生应变，并且这种应变对于成功的离子切割是至关重要的。在较高的注入功率密度，应变是放松和马赛克结构中看到的注入样品，其中血小板缺陷生长，传播，并合并由于在氢注入过程中的自退火效应。这种缺陷演化行为导致注入的Ge样品退火后没有起泡或形成离散的起泡，而不是期望的离子切割。
In this work, surface morphologies, strain status, and defect evolution were investigated for Ge wafers after hydrogen implantation with different implantation power densities. Hydrogen implantation generates strain in the Ge lattice at lower implantation power densities, and this strain is crucial for a successful ion cut. At higher implantation power densities, the strain is relaxed and mosaic structures are seen in the as-implanted samples, where platelet defects grow, propagate, and coalesce owing to the self-annealing effect during hydrogen implantation. This defect evolution behavior results in either no blistering or formation of discrete blisters after annealing of the implanted Ge samples, rather than the desired ion cut.