The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence.
The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence.
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DOI：
10.1186/1556-276x-8-320
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发表时间：
2013-07-13
影响因子：
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通讯作者：
Willander M
中科院分区：
文献类型：
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作者：
Abbasi MA;Ibupoto ZH;Hussain M;Nur O;Willander M
由于能源危机，廉价高效的白光发光二极管（led）受到了全世界的极大关注。本文中，我们在p型GaN上开发了基于排列良好的ZnO纳米棒和纳米管的异质结led，并插入了NiO缓冲层，其发光增强。扫描电子显微镜很好地证明了ZnO纳米棒的排列和在纳米管中的适当蚀刻。x射线衍射研究描述了在（002）峰GaN参与下ZnO纳米棒的纤锌矿晶体结构阵列。阴极发光光谱表现出较强的可见光发射峰和较宽的紫外发射峰，在425 nm处有一个微弱的GaN发射峰。电致发光研究表明，与没有NiO缓冲层的led相比，有NiO缓冲层的led的发光响应得到了很大的改善。在n型ZnO和p型GaN之间引入一层薄薄的NiO可能会阻止ZnO向GaN注入电子。此外，NiO缓冲层的存在可能会产生约束效应。
Cheap and efficient white light-emitting diodes (LEDs) are of great interest due to the energy crisis all over the world. Herein, we have developed heterojunction LEDs based on the well-aligned ZnO nanorods and nanotubes on the p-type GaN with the insertion of the NiO buffer layer that showed enhancement in the light emission. Scanning electron microscopy have well demonstrated the arrays of the ZnO nanorods and the proper etching into the nanotubes. X-ray diffraction study describes the wurtzite crystal structure array of ZnO nanorods with the involvement of GaN at the (002) peak. The cathodoluminescence spectra represent strong and broad visible emission peaks compared to the UV emission and a weak peak at 425 nm which is originated from GaN. Electroluminescence study has shown highly improved luminescence response for the LEDs fabricated with NiO buffer layer compared to that without NiO layer. Introducing a sandwich-thin layer of NiO between the n-type ZnO and the p-type GaN will possibly block the injection of electrons from the ZnO to the GaN. Moreover, the presence of NiO buffer layer might create the confinement effect.