Proximity correction for electron beam lithography
Proximity correction for electron beam lithography
复制标题
电子束光刻的邻近校正
DOI:
10.1117/1.600846
复制
发表时间:
1996
影响因子:
1.3
通讯作者:
M. Peckerar
中科院分区:
文献类型:
--
作者:
C. Marrian;Steven Chang;M. Peckerar
As the critical dimensions required in mask making and direct write by electron beam lithography become ever smaller, correction for proximity effects becomes increasingly important. Furthermore, the prob- lem is beset by the fact that only a positive energy dose can be applied with an electron beam. We discuss techniques such as chopping and dose shifting, which have been proposed to meet the positivity require- ment. An alternative approach is to treat proximity correction as an opti- mization problem. Two such methods, local area dose correction and optimization using a regularizer proportional to the informational entropy of the solution, are compared. A notable feature of the regularized prox- imity correction is the ability to correct for forward scattering by the gen- eration of a ''firewall'' set back from the edge of a feature. As the forward scattering width increases, the firewall is set back farther from the fea- ture edge. The regularized optimization algorithm is computationally time consuming using conventional techniques. However, the algorithm lends itself to a microelectronics integrated circuit coprocessor implementation, which could perform the optimization faster than even the fastest work stations. Scaling the circuit to larger number of pixels is best approached with a hybrid serial/parallel digital architecture that would correct for proximity effects over 10 8 pixels in about 1 h. This time can be reduced by simply adding additional coprocessors. © 1996 Society of Photo-Optical