Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode
Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode
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DOI：
10.1364/oe.18.019957
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发表时间：
2010-09-13
期刊：
影响因子：
3.8
通讯作者：
Cheng, H. H.
中科院分区：
文献类型：
--
作者：
Sun, G.;Soref, R. A.;Cheng, H. H.
本文介绍了一种硅基IV族半导体注入激光二极管的建模和模拟，其中有源区具有多量子阱结构，该结构由Ge0.9Sn0.1量子威尔斯阱形成，并通过Ge0.75Si0.1Sn0.15势垒分隔。选择这些合金组合物以同时满足三个条件：Ge0.9Sn0.1的直接带隙、Ge0.9Sn0.1与Ge0.75Si0.1Sn0.15之间的I型带对准以及威尔斯与势垒之间的晶格匹配。这种匹配确保了整个结构可以在硅衬底上的Ge0.75Si0.1Sn0.15缓冲区上无应变地生长-CMOS兼容工艺。详细分析了I型带偏移、载流子寿命、光限制和模式增益。载流子寿命主要受自发辐射过程而不是俄歇过程的影响。模式增益对有源区中量子威尔斯的数目有相当敏感的依赖关系。预计该激光器在室温下工作在2.3 μ m的中红外波段。(C)2010年美国光学学会
This paper presents modeling and simulation of a silicon-based group IV semiconductor injection laser diode in which the active region has a multiple quantum well structure formed with Ge0.9Sn0.1 quantum wells separated by Ge0.75Si0.1Sn0.15 barriers. These alloy compositions were chosen to satisfy three conditions simultaneously: a direct band gap for Ge0.9Sn0.1, type-I band alignment between Ge0.9Sn0.1 and Ge0.75Si0.1Sn0.15, and a lattice match between wells and barriers. This match ensures that the entire structure can be grown strain free upon a relaxed Ge0.75Si0.1Sn0.15 buffer on a silicon substrate - a CMOS compatible process. Detailed analysis is performed for the type I band offsets, carrier lifetime, optical confinement, and modal gain. The carrier lifetime is found to be dominated by the spontaneous radiative process rather than the Auger process. The modal gain has a rather sensitive dependence on the number of quantum wells in the active region. The proposed laser is predicted to operate at 2.3 mu m in the mid infrared at room temperature. (C) 2010 Optical Society of America