Improving radiation hardness of EEPROM/flash cell by N2O annealing
Improving radiation hardness of EEPROM/flash cell by N2O annealing
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DOI：
10.1109/55.701435
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发表时间：
1998-07
影响因子：
4.9
通讯作者：
Tiao-Yuan Huang;Fuh-Cheng Jong;Tien-Sheng Chao;Horng-Chih Lin;Len-Yi Leu;Konrad Young;Chen-Hsi Lin-Chen-H
中科院分区：
文献类型：
--
作者：
Tiao-Yuan Huang;Fuh-Cheng Jong;Tien-Sheng Chao;Horng-Chih Lin;Len-Yi Leu;Konrad Young;Chen-Hsi Lin-Chen-H
The effects of an N/sub 2/O anneal on the radiation effects of a split-gate electrical erasable programmable read only memory (EEPROM)/flash cell with a recently-proposed horn-shaped floating gate were studied. We have found that although the cells appear to survive 1 Mrad(Si) Co/sup 60/ irradiation without data retention failure, the write/erase cycling endurance was severely impeded after irradiation. Specifically, the write/erase cycling endurance was degraded to 20 K from the pre-irradiation value of 50 K. However, by adding an N/sub 2/O annealing step after the interpoly oxidation, the after-irradiation write/erase cycling endurance of the resultant cell can be significantly improved to over 45 K. N/sub 2/O annealing also improves the after-irradiation program and erase efficiencies. The N/sub 2/O annealing step therefore presents a potential method for enhancing the robustness of the horn-shaped floating-gate EEPROM/flash cells for radiation-hard applications.
