Formation of epitaxial Fe3−xSi1+x (0≤x≤1) silicides on Si(111)
Formation of epitaxial Fe3−xSi1+x (0≤x≤1) silicides on Si(111)
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Si(111)上外延Fe3−xSi1+x (0≤x≤1)硅化物的形成
DOI：
10.1063/1.359721
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
C. Pirri
中科院分区：
文献类型：
--
作者：
S. Hong;P. Wetzel;G. Gewinner;D. Bolmont;C. Pirri
采用共沉积法在室温下在Si（111）衬底上生长了外延Fe 3 − xSi 1 +x薄膜。通过低能电子衍射（LEED）、X射线光电子衍射（XPD）和X射线光电子能谱（XPS）研究了它们的结构和电子性质。这些薄膜的成分从Fe_3Si到FeSi，具有（1×1）的LEED图案。XPD和芯能级结合能测量都表明，单一的Fe 3 − xSi 1 +x相（0<x<1），没有体相，可以通过在Si（111）上外延来稳定。XPD实验清楚地表明，这些Fe 3 − xSi 1 +x（0≤x≤1）薄膜采用相同的立方结构。此外，Si 2 p，Fe 2 p3/2，和Fe 3s核心水平稍微移动到更高的结合能，这是由于从Fe 3Si（DO 3）到FeSi（CsCl）时的化学效应和局部配位的差异。除了FeSi（CsCl）化合物外，在所有的Fe 3 − xSi 1 +x化合物的Fe 3s芯能级XPS谱中都观察到了多重态分裂Δ E3 s。
Epitaxial Fe3−xSi1+x films have been grown on Si(111) by codeposition at room temperature. Their structural and electronic properties have been investigated by means of low‐energy electron diffraction (LEED), x‐ray photoelectron diffraction (XPD), and x‐ray photoemission spectroscopy (XPS). These films, with compositions ranging from Fe3Si to FeSi, exhibit a (1×1) LEED pattern. Both XPD and core level binding energy measurements indicate that single Fe3−xSi1+x phases (with 0<x<1), without bulk counterpart, can be stabilized by epitaxy on Si(111). The XPD experiment clearly shows that these Fe3−xSi1+x (0≤x≤1) films adopt the same cubic structure. Furthermore, the Si 2p, Fe 2p3/2, and Fe 3s core levels are slightly shifted to higher binding energies resulting from chemical effects and differences in local coordination when going from Fe3Si (DO3) to FeSi (CsCl). Multiplet splittings ΔE3s are observed in Fe 3s core‐level XPS spectra for all Fe3−xSi1+x compounds except the FeSi (CsCl) one.