Temperature dependence of the conductivity of graphene on boron nitride
Temperature dependence of the conductivity of graphene on boron nitride
复制标题
氮化硼石墨烯电导率的温度依赖性
DOI:
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发表时间:
2012
期刊:
影响因子:
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通讯作者:
F. Guinea
中科院分区:
文献类型:
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作者:
J. Schiefele;F. Sols;F. Guinea
Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049, Madrid, Spain(Dated: February 11, 2012)The substrate material of monolayer graphene inuences the charge carrier mobility by variousmechanisms. At room temperature, the scattering of conduction electrons by phonon modes local-ized at the substrate surface can severely limit the charge carrier mobility. We here show that forsubstrates made of the piezoelectric hexagonal boron nitride (hBN), in comparison to the widelyused SiO