Temperature dependence of the conductivity of graphene on boron nitride

Temperature dependence of the conductivity of graphene on boron nitride
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氮化硼石墨烯电导率的温度依赖性

DOI:
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发表时间:
2012
期刊:
影响因子:
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通讯作者:
F. Guinea
F. Guinea
中科院分区:
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文献类型:
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作者:
J. Schiefele;F. Sols;F. Guinea

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CSIC马德里材料科学研究所,Cantoblanco, E-28049, Madrid, Spain(日期:2012年2月11日)单层石墨烯衬底材料通过各种机制影响载流子迁移率。在室温下,基片表面局部化声子模式对导电电子的散射会严重限制载流子的迁移率。我们在这里展示了压电六方氮化硼(hBN)制成的衬底,与广泛使用的SiO相比
Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049, Madrid, Spain(Dated: February 11, 2012)The substrate material of monolayer graphene inuences the charge carrier mobility by variousmechanisms. At room temperature, the scattering of conduction electrons by phonon modes local-ized at the substrate surface can severely limit the charge carrier mobility. We here show that forsubstrates made of the piezoelectric hexagonal boron nitride (hBN), in comparison to the widelyused SiO