80–110-GHz Broadband Linear PA With 33% Peak PAE and Comparison of Stacked Common Base and Common Emitter PA in InP
80–110-GHz Broadband Linear PA With 33% Peak PAE and Comparison of Stacked Common Base and Common Emitter PA in InP
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峰值 PAE 为 33% 的 80–110 GHz 宽带线性 PA 以及 InP 中堆叠式共基极和共发射极 PA 的比较
DOI：
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发表时间：
2021
影响因子：
3
通讯作者：
K. Sengupta
中科院分区：
文献类型：
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作者：
Zheng Liu;T. Sharma;K. Sengupta
提出了一种高效率、紧凑的80-110 GHz InP功率放大器(PA)，该功率放大器基于堆叠公共基区(CB)拓扑，并采用传统的堆叠公共发射极(CE)拓扑进行了相应的设计。两者的比较表明，在250 nm InP异质结双极晶体管(HBT)中，前者具有更高的功率增益、更好的增益压缩行为(线性)和更高的回退效率。在90 GHz频率下，叠加型CB/CE功率放大器的增益为11.8db/6db，峰值功率效率为33%/34%，6d B退避时的平均功率效率为16.8%/14.5%，功率利用率为18.7dBm/19.6dBm。调制测试表明，在11.8dBm的平均功率下，对于堆叠的CB PA，支持3Gbps的-QAM的EVM为2.38%。具有17.9-18.9-dBm PSAT的堆叠式CB PA在80-110 GHz范围内展示了使用InP技术的最高效率、宽带和线性功率放大器之一<；直插式公式>；<；特技数学符号=“LaTeX”>；$W$<；/特技-数学&>频段。
This work presents a high efficiency, compact 80–110-GHz InP power amplifier (PA) based on stacked common base (CB) topology and a counterpart design using conventional stacked common emitter (CE) topology. The comparison between the two exhibits that the former delivers higher power gain, superior-gain compression behavior (linearity), and higher back-off efficiency in <inline-formula> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula>-band in 250-nm InP heterojunction bipolar transistor (HBT). At 90 GHz, the stacked CB/CE PA achieves 11.8 dB/6dB gain, 33%/34% peak PAE, 16.8%/14.5% PAE at 6-dB back-off, and Psat of 18.7 dBm/19.6 dBm. Modulation test exhibits an EVM of 2.38% at 11.8-dBm average power supporting 3 Gbps 64-QAM for the stacked CB PA. The stacked CB PA with 17.9–18.9-dBm Psat across 80–110 GHz demonstrates one of the highest efficiency, broadband and linear PAs in <inline-formula> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula>-band using InP technology.