Optical and electrical study of core-shell silicon nanowires for solar applications
Optical and electrical study of core-shell silicon nanowires for solar applications
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DOI：
10.1364/oe.19.0a1057
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发表时间：
2011-09-12
期刊：
影响因子：
3.8
通讯作者：
Lee, Sungjoo
中科院分区：
文献类型：
--
作者：
Li, Zhenhua;Wang, Jian;Lee, Sungjoo
In this work, we report a CMOS comparable fabrication process of core-shell SiNW solar cell from single-crystalline p-type Si(100) test wafers. Optical lithography defined plasma etching was used to form highly ordered vertical SiNW arrays, which display a drastic reduction in optical reflectance over a wide range of wavelengths. BF2 and P ion implantations were employed for producing a sharp and shallow radial p-n junction. Under AM 1.5G illumination, the device demonstrates a short circuit current density (J(sc)) of 14.2 mA/cm(2), an open circuit voltage (V-oc) of 0.485 V and a fill factor (FF) of 42.9%, giving a power conversion efficiency (PCE) of 2.95%. The J(sc) observed is 52% higher than that in the control device with planar Si p-n junction, indicating significant enhancement in carrier generation and collection efficiency from the core-shell structure. Impact of series resistance (R-s) is also studied, highlighting potential improvement of PCE to 4.40% in the absence of R-s. With top contact optimized, PCE could further increase to 6.29%. (C) 2011 Optical Society of America
