Ultrahigh energy-storage density in A-/B-site co-doped AgNbO3 lead-free antiferroelectric ceramics: insight into the origin of antiferroelectricity
Ultrahigh energy-storage density in A-/B-site co-doped AgNbO3 lead-free antiferroelectric ceramics: insight into the origin of antiferroelectricity
复制标题
A位/B位共掺杂AgNbO3无铅反铁电陶瓷的超高储能密度：洞察反铁电的起源
DOI：
10.1039/c9ta06457e
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发表时间：
2019-12-14
影响因子：
11.9
通讯作者：
Wei, Yuezhou
中科院分区：
文献类型：
--
作者：
Han, Kai;Luo, Nengneng;Wei, Yuezhou
与超级电容器和电池相比，无铅介电电容器由于其稳定且快速的充放电性能而在储能应用方面具有巨大的潜力。然而，当今无铅介电电容器的主要限制之一是能量存储密度低。在这项工作中，我们表明，通过在A位和B位分别用Sm3+和Ta5+离子进行化学共取代，可以显着提高反铁电特性的稳定性。结果，(Sm0.02Ag0.94)(Nb0.9Ta0.1)O-3陶瓷的储能密度显着提高，高达4.87 J cm(-3)，并且还表现出良好的热稳定性。
Lead-free dielectric capacitors have tremendous potential for energy storage applications due to their stable and fast charge-discharge performances in comparison to supercapacitors and batteries. One of the key limitations to today's lead-free dielectric capacitors, however, is the low energy storage density. In this work, we show that the stability of antiferroelectric characteristics can be significantly improved by chemical co-substitution with Sm3+ and Ta5+ ions in the A- and B-site, respectively. As a consequence, a remarkably improved energy storage density up to 4.87 J cm(-3) was achieved in (Sm0.02Ag0.94)(Nb0.9Ta0.1)O-3 ceramics, which also exhibited good thermal stability with variations