Fourfold symmetric anisotropic magnetoresistance based on magnetocrystalline anisotropy and antiphase boundaries in reactive sputtered epitaxial Fe3O4 films
Fourfold symmetric anisotropic magnetoresistance based on magnetocrystalline anisotropy and antiphase boundaries in reactive sputtered epitaxial Fe3O4 films
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DOI：
10.1063/1.3334722
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发表时间：
2010-03
影响因子：
4
通讯作者：
Peng Li;E. Jiang;H. Bai
中科院分区：
文献类型：
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作者：
Peng Li;E. Jiang;H. Bai
外延Fe_3O_4薄膜在高场下的四重对称各向异性磁电阻（AMR）与传统的二重对称性不相容，与电流方向无关，但与其磁晶各向异性有关.（001）、（110）和（112）取向的Fe_3O_4薄膜在AMR中表现出四重对称性，而（111）取向的Fe_3O_4薄膜表现出二重对称性。叠加到外部磁场上的立方磁晶各向异性场修改反相边界附近的自旋的排列，导致跨反相边界的运输电子的振荡散射率，从而在AMR中相应的四重对称性。
The fourfold symmetric anisotropic magnetoresistance (AMR) at high fields in epitaxial Fe3O4 films, which is incompatible with the traditional twofold symmetry, was found to be independent with the current direction but associated with their magnetocrystalline anisotropy. (001)-, (110)-, and (112)-oriented Fe3O4 films show fourfold symmetry in AMR while twofold symmetry appears for (111)-oriented Fe3O4 films. The cubic magnetocrystalline anisotropy field superimposed onto the external magnetic field modifies the alignment of the spins near antiphase boundaries, leading to the oscillating scattering rate for the transport electrons across antiphase boundaries and thus the corresponding fourfold symmetry in AMR.