Energy-efficient graphene and ITO-based MZI and absorption modulators (Conference Presentation)
Energy-efficient graphene and ITO-based MZI and absorption modulators (Conference Presentation)
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节能石墨烯和基于 ITO 的 MZI 和吸收调制器（会议演示）
DOI：
10.1117/12.2509723
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Jiang, Shibin
中科院分区：
文献类型：
--
作者：
Sorger, Volker J.;Amin, Rubab;Ma, Zhizhen;Chen, Ray;Dalir, Hamed;Digonnet, Michel J.;Jiang, Shibin
随着硅光子学的成熟和成熟，硅中微弱的电光效应的内在局限性限制了器件的进一步发展。为了克服这一点，将新兴的电光材料异质集成到硅或氮化硅平台中是一条很有希望的途径，可以提供1fJ/位的器件级效率、50+GHz的快速开关和<；10‘S u^2紧凑的占地面积。石墨烯的Pauli阻塞为器件性能带来了诱人的机会，包括宽带吸收、单位强折射率调制、低接触电阻。类似地，ITO已经显示了enz行为，并且可以针对EOMS或EAMS进行可调。在这里，我们回顾了所有异质集成在Si或SiN上的调制器的最新进展，例如a)使能DBR的光子60 GHz石墨烯EAM，b)100aJ/比特效率的混合等离子体石墨烯EAM，d)第一个显示VPL=0.52V-mm的基于ITO的MZI，以及e)创纪录低VPL=11V-um的等离子体ITO MZI。最后，我们讨论了调制器的定标规律，提出了实现10‘S AJ/比特器件的路线图。
With success of silicon photonics having mature to foundry-readiness, the intrinsic limitations of the weak electro-optic effects in Silicon limit further device development. To overcome this, heterogeneous integration of emerging electrooptic materials into Si or SiN platforms are a promising path to deliver <1fJ/bit device-level efficiency, 50+Ghz fast switching, and <10's um^2 compact footprints. Graphene's Pauli blocking enables intriguing opportunities for device performance to include broadband absorption, unity-strong index modulation, low contact resistance. Similarly, ITO has shown ENZ behavior, and tunability for EOMs or EAMs. Here we review recent modulator advances all heterogeneously integrated on Si or SiN such as a) a DBR-enabled photonic 60 GHz graphene EAM, b) a hybrid plasmon graphene EAM of 100aJ/bit efficiency, d) the first ITO-based MZI showing a VpL = 0.52 V-mm, and e) a plasmonic ITO MZI with a record low VpL = 11 V-um. We conclude by discussing modulator scaling laws for a roadmap to achieve 10's aJ/bit devices.