Low temperature specific heat and magnetoresistance of the ferromagnetic semiconductor UFe4P12
Low temperature specific heat and magnetoresistance of the ferromagnetic semiconductor UFe4P12
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DOI：
10.1016/0304-8853(86)90622-0
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发表时间：
1986-02
影响因子：
2.7
通讯作者：
M. Torikachvili;C. Rossel;M. McElfresh;M. Maple;R. P. Guertin;G. Meisner
中科院分区：
文献类型：
--
作者：
M. Torikachvili;C. Rossel;M. McElfresh;M. Maple;R. P. Guertin;G. Meisner
对铁磁半导体化合物 UFe4P12 在其居里温度 Tc=3.15 K 附近进行了低温 (T) 比热和磁阻测量。比热数据显示在 Tc 附近有一个明显的峰值。在Tc以上，磁阻大且为负，而在Tc附近，磁阻最初为正，经过最大值，然后减小并变得大且负。
Low temperature (T) specific heat and magnetoresistance measurements have been performed on the ferromagnetic semiconducting compound UFe4P12in the vicinity of its Curie temperatureTc=3.15 K. The specific heat data reveal a pronounced peak nearTc. The magnetoresistance aboveTcis large and negative, whereas nearTc, it is initially positive, passes through a maximum, then decreases and becomes large and negative.