31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate.
31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate.
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DOI：
10.1364/oe.15.013965
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发表时间：
2007-10
期刊：
影响因子：
3.8
通讯作者：
T. Yin;R. Cohen;M. Morse;G. Sarid;Y. Chetrit;D. Rubin;M. Paniccia
中科院分区：
文献类型：
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作者：
T. Yin;R. Cohen;M. Morse;G. Sarid;Y. Chetrit;D. Rubin;M. Paniccia
我们报告的倏逝耦合锗波导光电探测器上生长的硅脊形波导。Ge波导探测器的宽度为7.4 μ m，长度为50 μ m，在-2V，1550 nm处的光学带宽为31.3GHz。在-2V电压下，该探测器在1550 nm处的响应度为0.89 A/W，暗电流为169 nA。从更长的Ge波导探测器（4.4 x 100 mum 2）也测量到1.16 A/W的更高响应度，在-2V下具有29.4 GHz的相应带宽。还示出了在40 Gb/s下的开眼图。
We report on evanescently coupled Ge waveguide photodetectors that are grown on top of Si rib waveguides. A Ge waveguide detector with a width of 7.4mum and length of 50 mum demonstrated an optical bandwidth of 31.3 GHz at -2V for 1550nm. In addition, a responsivity of 0.89 A/W at 1550 nm and dark current of 169 nA were measured from this detector at -2V. A higher responsivity of 1.16 A/W was also measured from a longer Ge waveguide detector (4.4 x 100 mum2), with a corresponding bandwidth of 29.4 GHz at -2V. An open eye diagram at 40 Gb/s is also shown.