Correlation of electron density changes with optical frequency shifts in optically injected semiconductor lasers
Correlation of electron density changes with optical frequency shifts in optically injected semiconductor lasers
复制标题
光注入半导体激光器中电子密度变化与光频移的相关性
DOI：
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发表时间：
2006
影响因子：
2.5
通讯作者：
M. Adams
中科院分区：
文献类型：
--
作者：
N. Al;I. Henning;M. Adams
本文从实验和理论两方面研究了半导体激光器在大范围光注入强度下的电子密度动力学。在锁定带宽内，生成三维注入锁定稳定性图，以呈现锁定的完整画面。在锁定范围之外，观察并系统地研究了谐振频移。这一现象成功地与载流子密度的变化相关联，并在理论上得到了验证。
We have studied experimentally and theoretically the dynamics of electron density in a semiconductor laser subject to a wide range of optical injection strength. Within the locking bandwidth, three-dimensional injection locking stability maps were generated to present a complete picture of locking. Beyond the locking range, resonance frequency shifts were observed and systematically investigated. This phenomenon was successfully correlated with the variation of carrier density and theoretically verified.