Trapping and detrapping effects in high-quality chemical-vapor-deposition diamond films: Pulse shape analysis of diamond particle detectors
Trapping and detrapping effects in high-quality chemical-vapor-deposition diamond films: Pulse shape analysis of diamond particle detectors
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DOI：
10.1103/physrevb.64.195205
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发表时间：
2001-10
影响因子：
3.7
通讯作者：
M. Marinelli;E. Milani;A. Paoletti;A. Tucciarone;G. Verona-Rinati;M. Angelone;M. Pillon
中科院分区：
文献类型：
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作者：
M. Marinelli;E. Milani;A. Paoletti;A. Tucciarone;G. Verona-Rinati;M. Angelone;M. Pillon
本文以5.5MeVa粒子撞击微波化学气相沉积（CVD）高质量金刚石膜为探针，分析了金刚石粒子探测器响应的时间演化。当探测器被B粒子预辐照时，脉冲的幅度和时间演化都发生了急剧的变化。泵激后产生的慢分量，表示载流子俘获和释放~脱陷。获得的脉冲形状的积极和消极的检测器的极性进行比较，在生长和泵浦状态。至少有两个空穴捕获中心的存在对于解释结果是必要的，较浅的中心具有约0.3 eV的激活能。阐明了泵浦效应，证明了电子和空穴所起的不同作用。我们修改了以前的模型的陷阱-脱陷行为原来适用于Si ~Li！探测器描述了CVD金刚石探测器的复杂行为，并在此基础上进行了计算机模拟，模拟得到的脉冲波形与实验结果吻合较好，所涉及的物理参数取值合理，有助于研究和识别限制CVD金刚石探测器探测效率的缺陷。场辅助脱陷似乎发生约10 V/cm的字段。
An analysis of the time evolution of the response of diamond particle detectors is carried out, using as a probe 5.5 MeVa particles impinging on high-quality diamond films grown by microwave chemical vapor deposition~CVD!. Both the amplitude and the time evolution of the pulses are shown to change drastically when the detector is preirradiated with b particles~pumping!, a slow component developing after pumping, indicating carriers trapping and releasing ~detrapping!. Pulse shapes obtained for positive and negative detector polarities are compared in both the as-grown and pumped states. The presence of at least two trapping centers for holes is necessary to explain the results, the shallower having an activation energy of about 0.3 eV. The effects of pumping are clarified, and the different role played by electrons and holes is evidenced. We modify a previous model for trapping-detrapping behavior originally applied to Si ~Li ! detectors to describe the more complex behavior of CVD diamond detectors, and develop a computer simulation based on it. The simulated pulse shapes agree very well with experiment with reasonable values of the physical parameters involved, making this technique helpful for studying and identifying defects which are responsible for limitation of the efficiency of CVD diamond particle detectors. Field-assisted detrapping seems to take place for fields of about 10 V/cm.