Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process
Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process
复制标题
用于负色调剥离工艺的 HSQ/PMMA 双层光刻胶的电子束光刻
DOI：
10.1016/j.mee.2008.01.006
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发表时间：
2008-05-01
影响因子：
2.3
通讯作者：
Cui, Zheng
中科院分区：
文献类型：
--
作者：
Yang, Haifang;Jin, Aizi;Cui, Zheng
研究了HSQ/PMMA双层抗蚀剂系统的负性剥离工艺，其中HSQ为负性电子束抗蚀剂顶层，PMMA为底层。首先使用电子束光刻在HSQ抗蚀剂上定义图案，然后使用氧反应离子蚀刻将图案转移到底部PMMA层中。电子束曝光的HSQ上的PMMA层的顶部已被表征，显示PMMA底层上的HSQ的曝光没有影响。确定了反应离子刻蚀PMMA底层的最佳工艺条件。在PMMA层的底切长度被发现接近线性依赖于蚀刻时间。在HSQ/PMMA双层抗蚀剂体系中实现了良好的底切轮廓，并成功地制备了良好的负性金属剥离结构。(C)2008 Elsevier B. V.保留所有权利。
A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA layer using oxygen reactive ion etching. Electron beam exposure of HSQ on top of PMMA layer has been characterised, showing the PMMA underlayer has no effect on the exposure of HSQ. Optimum conditions for reactive ion etching of PMMA underlayer have been established. The undercut length in the PMMA layer is found near linearly dependence on etching time. Well defined undercut profile has been achieved in the HSQ/PMMA bilayer resist system, and good negative tone metal lift-off structures have been successfully produced. (C) 2008 Elsevier B.V. All rights reserved.