Equivalent oxide thickness scaling of Al2O3/Ge metal—oxide—semiconductor capacitors with ozone post oxidation
Equivalent oxide thickness scaling of Al2O3/Ge metal—oxide—semiconductor capacitors with ozone post oxidation
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DOI：
10.1088/1674-1056/22/6/067701
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发表时间：
2013-06
影响因子：
1.7
通讯作者：
Sun Jia-bao;Yang Zhou-wei;Geng Yang;Lü Hong-Liang;Wu Wang-Ran;Ye Xiang-Dong;David Zhang Wei;Shi Yi;Zhao Yi
中科院分区：
文献类型：
--
作者：
Sun Jia-bao;Yang Zhou-wei;Geng Yang;Lü Hong-Liang;Wu Wang-Ran;Ye Xiang-Dong;David Zhang Wei;Shi Yi;Zhao Yi
采用原子层沉积法在锗（Ge）上沉积氧化铝薄膜作为栅介质，并在臭氧气氛中对其进行后氧化。没有额外的界面层被检测到由高分辨率的横截面透射电子显微镜和X射线光电子能谱测量臭氧后氧化（OPO）处理后。证实了OPO处理的Al 2 O3/Ge MOS电容器的等效氧化物厚度的减小。此外，随着OPO处理时间的增加，栅极漏电流连续下降。这一结果可归因于OPO处理改善了薄膜质量。
Aluminum—oxide films deposited as gate dielectrics on germanium (Ge) by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was detected by the high-resolution cross-sectional transmission electron microscopy and X-ray photoelectron spectroscopy measurements made after the ozone post oxidation (OPO) treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.