Dislocation density reduction in multicrystalline silicon solar cell material by high temperature annealing
Dislocation density reduction in multicrystalline silicon solar cell material by high temperature annealing
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DOI：
10.1063/1.2990644
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发表时间：
2008-09-22
影响因子：
4
通讯作者：
Buonassisi, Tonio
中科院分区：
文献类型：
--
作者：
Hartman, Katy;Bertoni, Mariana;Buonassisi, Tonio
我们提出并证明了一种方法，以消除性能限制的位错多晶硅（mc-Si）太阳能电池材料，适用于晶片或砖。通过高温退火，在受控的环境和时间-温度分布下，利用杂质扩散阻挡层，在商业mc-Si中实现了> 95%的位错密度降低。位错密度降低遵循Kuhlmann [Proc. Phys. Soc.，伦敦，A节64，140（1951）]和内斯[Acta Metall. Mater. 43，2189（1995）]。据信，较高的退火温度（>1170摄氏度）允许位错运动不受晶体学滑移面的约束，导致位错在几分钟内湮灭。(C)2008年美国物理研究所。
We propose and demonstrate a method to remove performance-limiting dislocations from multicrystalline silicon (mc-Si) solar cell material, appropriate for wafers or bricks. Dislocation density reductions of > 95% are achieved in commercial mc-Si via high temperature annealing with an impurity diffusion barrier, with controlled ambient and time-temperature profiles. The dislocation density reduction follows temperature-dependent models developed by Kuhlmann [Proc. Phys. Soc., London, Sect. A 64, 140 (1951)] and Nes [Acta Metall. Mater. 43, 2189 (1995)]. It is believed that higher annealing temperatures (>1170 degrees C) allow dislocation movement unconstrained by crystallographic glide planes, leading to dislocation annihilation within minutes. (C) 2008 American Institute of Physics.