Tunneling field-effect transistor with a strained Si channel and a Si 0.5 Ge 0.5 source
Tunneling field-effect transistor with a strained Si channel and a Si 0.5 Ge 0.5 source
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具有应变 Si 沟道和 Si 0.5 Ge 0.5 源极的隧道场效应晶体管
DOI：
10.1109/essderc.2011.6044187
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
S. Mantl
中科院分区：
文献类型：
--
作者：
Qing;W. Yu;B. Zhang;M. Schmidt;S. Richter;D. Buca;J. Hartmann;R. Lupták;A. Fox;K. Bourdelle;S. Mantl
我们报告的n沟道隧穿场效应晶体管（TFET）与拉伸应变硅沟道和压缩应变Si 0.5 Ge 0.5源。该器件具有良好的性能，在超过3个数量级的漏电流范围内，平均亚阈值摆幅S为80 mV/dec。我们观察到，施加的背栅偏置增加了1.6倍的导通电流，并改善了关断电流和亚阈值摆幅（S）。低温测量显示出轻微的温度依赖性的S，隧道占主导地位的设备的特性。
We report on n-channel tunneling field-effect transistors (TFET) with a tensile strained Si channel and a compressively strained Si 0.5 Ge 0.5 source. The device shows good performance with an average subthreshold swing S of 80mV/dec over a drain current range of more than 3 orders of magnitude. We observed that an applied back-gate bias increases the on-current by a factor of 1.6, and improves the off-current and the subthreshold swing (S). Low temperature measurements show a slightly temperature dependent S, characteristic for a tunneling dominated device.