Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors
Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors
复制标题
应力电压对硅基氮化镓晶体管动态缓冲响应的影响
DOI：
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复制
发表时间：
2016
期刊：
影响因子：
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通讯作者：
A. Vescan
中科院分区：
文献类型：
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作者：
H. Yacoub;D. Fahle;M. Eickelkamp;A. Wille;C. Mauder;M. Heuken;H. Kalisch;A. Vescan
为了研究应力电压对GaN-on-Si(GaN-on-Si)晶体管动态特性的影响，在导电硅衬底上进行了背栅测量。研究了两个可比较的样品，唯一的区别是垂直位错密度。结果表明，位错密度与GaN缓冲器在高应力条件下的动态放电能力有明显的相关性。
Back-gated measurements on conductive silicon substrates have been performed to investigate the effect of stress voltage on the dynamic behaviour of GaN-on-silicon (GaN-on-Si) transistors. Two comparable samples were studied with the only difference being the vertical dislocation density. Results show a clear correlation between dislocation density and the ability of the GaN buffer to dynamically discharge under high stress conditions.