High-Q whispering-gallery mode lasing from nanosphere-patterned GaN nanoring arrays
High-Q whispering-gallery mode lasing from nanosphere-patterned GaN nanoring arrays
复制标题
DOI：
10.1063/1.3556281
复制
发表时间：
2011-02-14
影响因子：
4
通讯作者：
Choi, H. W.
中科院分区：
文献类型：
--
作者：
Li, K. H.;Ma, Zetao;Choi, H. W.
A hexagonal-close-packed ordered array of nanorings was fabricated on GaN with a modified nanosphere lithography process. The spheres initially served as etch masks for the formation of closed-packed nanopillars. The spheres were then shrunk and, with a layer of oxide deposited, the roles of the spheres became masks for liftoff. The final etch produced nanorings with wall widths of 140 nm. Photopumped lasing with splitting modes was observed at room temperature, with a low lase threshold of similar to 10 mJ/cm(2) and high quality factor of similar to 5000, via whispering-gallery modes. The resonant frequencies were verified through finite-difference time-domain simulations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3556281]
