A surface mechanism for O 3 production with N 2 addition in dielectric barrier discharges
A surface mechanism for O 3 production with N 2 addition in dielectric barrier discharges
复制标题
介质阻挡放电中添加 N 2 产生 O 3 的表面机制
DOI:
10.1088/1361-6595/ace95d
复制
发表时间:
2023
影响因子:
3.8
通讯作者:
Kushner, Mark J.
中科院分区:
文献类型:
--
作者:
Meyer, Mackenzie;Foster, John;Kushner, Mark J.
Ozone, O 3, is a strong oxidizing agent often used for water purification. O 3 is typically produced in dielectric barrier discharges (DBDs) by electron-impact dissociation of O 2, followed by three-body association reactions between O and O 2. Previous studies on O 3 formation in low-temperature plasma DBDs have shown that O 3 concentrations can drop to nearly zero after continued operation, termed the ozone-zero phenomenon (OZP). Including small (< 4%) admixtures of N 2 can suppress this phenomenon and increase the O 3 production relative to using pure O 2 in spite of power deposition being diverted from O 2 to N 2 and the production of nitrogen oxides, N x O y. The OZP is hypothesized to occur because O 3 is destroyed on the surfaces in contact with the plasma. Including N 2 in the gas mixture enables N atoms to occupy surface sites that would otherwise participate in O 3 destruction. The effect of N 2 in ozone-producing DBDs was computationally investigated using a global plasma chemistry model. A general surface reaction mechanism is proposed to explain the increase in O 3 production with N 2 admixtures. The mechanism includes O 3 formation and destruction on the surfaces, adsorption and recombination of O and N, desorption of O 2 and N 2, and NO x reactions. Without these reactions on the surface, the density of O 3 monotonically decreases with increasing N 2 admixture due to power absorption by N 2 leading to the formation of nitrogen oxides. With N-based surface chemistry, the concentrations of O 3 are maximum with a few tenths of percent of N 2 depending on the O 3 destruction probability on the surface. The consequences of the surface chemistry on ozone production are less than the effect of gas temperature without surface processes. An increase in the O 3 density with N-based surface chemistry occurs when the surface destruction probability of O 3 or the surface roughness was decreased.