Atomic wires and their electronic properties

Atomic wires and their electronic properties
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原子线及其电子特性

DOI:
10.1116/1.589386
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发表时间:
1997
影响因子:
1.4
通讯作者:
Toshishige Yamada
Toshishige Yamada
中科院分区:
工程技术4区
文献类型:
--
作者:
Toshishige Yamada

文献摘要

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原子线电子被认为是,带结构和由此产生的费米能量的设计通过操纵晶格常数。使用紧束缚理论与通用参数,它表明,Si线和阵列是金属的,Mg线是绝缘的,和Mg阵列具有金属和绝缘相无限大,孤立的情况下。结构具有有限的尺寸,并且电极是应用所必需的。有限的尺寸带来离散的电子能级,电极将对结构进行充电或放电,反映出功函数的差异,从而甚至可以改变基本的电子性质。电极将导致进一步的复杂化,例如能级加宽、通过有效电容的库仑相互作用或模式选择电阻。当接触满足一定条件时,金属导线在小电压下会呈现两种不同的I-V模式。根据是否最高占用L.
Atomic wire electronics are considered, where the band structure and the resultant Fermi energy are designed by manipulating the lattice constant. Using the tight-binding theory with universal parameters, it is shown that Si wires and arrays are metallic, Mg wires are insulating, and Mg arrays have metallic and insulating phases for infinitely large, isolated cases. Structures are of finite size, and electrodes are necessary for the applications. The finite size brings about discrete electron energy levels, and electrodes will charge or discharge the structure, reflecting the work function difference, so that even the basic electronic properties may be altered. The electrodes will cause further complications such as the energy level broadening, the Coulomb interaction through an effective capacitance, or the mode-selection resistance. When the contact satisfies certain conditions, a metallic wire is predicted to show two distinct I–V patterns for small voltages. Depending on whether the highest occupied l...