Reversible and nonvolatile modulation of electrical resistance in SnO2 by external strain
Reversible and nonvolatile modulation of electrical resistance in SnO2 by external strain
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DOI：
10.7567/apex.7.031101
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发表时间：
2014-02
影响因子：
2.3
通讯作者：
M. Sakurai;Kewei Liu;M. Aono
中科院分区：
文献类型：
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作者：
M. Sakurai;Kewei Liu;M. Aono
氧化锡（SnO2）微棒在施加机械应变和电压下表现出可逆且非易失性的半导体-绝缘体转变。为了了解这种转变的起源，我们使用透射电子显微镜 (TEM) 和光致发光 (PL) 光谱研究了机械应变下 SnO2 线的晶格缺陷。 TEM 研究表明机械弯曲 SnO2 纳米线中存在滑移面。弯曲 SnO2 微棒的 PL 光谱显示出由带隙中机械应力引起的缺陷引起的强烈可见光发射，这支持了非易失性跃迁。
Tin oxide (SnO2) microrods exhibited a reversible and nonvolatile semiconductor–insulator transition under an applied mechanical strain and voltage. To understand the origin of this transition, we studied the lattice defects of a SnO2 wire under mechanical strain, using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. The TEM studies indicate slip planes in mechanically bent SnO2 nanowires. The PL spectra of the bent SnO2 microrods show strong visible emission caused by mechanical-stress-induced defects in the band gap, which supported the nonvolatile transition.