Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer
Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer
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DOI：
10.1063/1.3531559
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发表时间：
2010-12
影响因子：
4
通讯作者：
Chenxin Zhu;Z. Huo;Zhongguang Xu;Manhong Zhang;Qin Wang;Jing Liu;S. Long;Ming Liu
中科院分区：
文献类型：
--
作者：
Chenxin Zhu;Z. Huo;Zhongguang Xu;Manhong Zhang;Qin Wang;Jing Liu;S. Long;Ming Liu
提出了一种基于带隙工程俘获层HfO 2/Al 2 O3/HfO 2（HAH）的高κ电荷俘获闪存（CTF）结构，用于多层存储单元。与单个HfO 2俘获层相比，基于HAH俘获层的CTF存储器件表现出更大的9.2V存储窗口、更快的编程/擦除速度和显著改善的数据保持。存储器性能和可靠性的提高归因于在俘获层中通过带隙工程调制电荷分布。研究结果为今后CTF的设计提供了指导。
A high-κ based charge trap flash (CTF) memory structure using bandgap engineered trapping layer HfO2/Al2O3/HfO2 (HAH) has been demonstrated for multilevel cell applications. Compared to a single HfO2 trapping layer, a CTF memory device based on the HAH trapping layer exhibits a larger memory window of 9.2 V, faster program/erase speed, and significantly improved data retention. Enhancements of memory performance and reliability are attributed to the modulation of charge distribution by bandgap engineering in trapping layer. The findings provide a guide for future design of CTF.