Reproducible growth of p-type ZnO:N using a modified atomic layer deposition process combined with dark annealing
Reproducible growth of p-type ZnO:N using a modified atomic layer deposition process combined with dark annealing
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DOI：
10.1063/1.3000604
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发表时间：
2008-10-27
影响因子：
4
通讯作者：
MacManus-Driscoll, J. L.
中科院分区：
文献类型：
--
作者：
Dunlop, L.;Kursumovic, A.;MacManus-Driscoll, J. L.
氮掺杂 ZnO (ZnO:N) 薄膜通过大气原子层沉积 (ALD) 在 100 至 300 摄氏度之间沉积。需要进行后退火以去除补偿缺陷。经过低温暗退火后，原本的n型薄膜变成了p型。在低温 (= 200 摄氏度) 下沉积的薄膜具有较高的 mu 值 (6 cm(2) V-1 s(-1))，但 n(p) 值
Nitrogen doped ZnO (ZnO:N) films were deposited by atmospheric atomic layer deposition (ALD) between 100 and 300 degrees C. Postannealing was required to remove compensating defects. After a low temperature dark annealing, originally n-type films became p-type. Films deposited at low temperatures (= 200 degrees C) have higher mu values (6 cm(2) V-1 s(-1)) but n(p) values