Backside illuminated thinned CMOS image sensors for space imaging
Backside illuminated thinned CMOS image sensors for space imaging
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DOI：
10.1109/icsens.2008.4716712
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发表时间：
2008-12
期刊：
影响因子：
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通讯作者：
K. Minoglou;K. de Munck;D. Tezcan;C. van Hoof;P. de Moor;J. Bogaerts;I. F. Veltroni
中科院分区：
文献类型：
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作者：
K. Minoglou;K. de Munck;D. Tezcan;C. van Hoof;P. de Moor;J. Bogaerts;I. F. Veltroni
本文介绍了Imec正在进行的两个方面的研究，以开发高端CMOS APS传感器，优化空间成像。已经开发出具有独特的技术和性能增强概念的组合的混合和单片薄化背照式CMOS成像器。在这里，我们报告他们的辐射耐受性和紫外线灵敏度，空间科学成像仪器的两个关键特性。辐射测试，使用质子和伽马辐照，CMOS成像器证明，暗电流性能没有显着恶化。此外，在185-400 nm照明下拍摄的初始测试图像显示成像器是UV敏感的。
This paper presents two aspects of ongoing research at Imec, to develop high-end CMOS APS sensors, optimized for space-born imaging. Both hybrid and monolithic thinned backside illuminated CMOS imagers with a unique combination of techniques and performance enhancing concepts have been developed. Here we report on their radiation tolerance and UV sensitivity, two critical characteristics for space science imaging instruments. Radiation testing, using both proton and gamma irradiation, of CMOS imagers proved that dark current performance did not significantly deteriorate. Also, initial test images taken under 185-400 nm illumination, showed the imagers to be UV sensitive.