Deep levels induced by reactive ion etching in n- and p-type 4H-SiC
Deep levels induced by reactive ion etching in n- and p-type 4H-SiC
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DOI：
10.1063/1.3460636
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发表时间：
2010-07-15
影响因子：
3.2
通讯作者：
Kimoto, Tsunenobu
中科院分区：
文献类型：
--
作者：
Kawahara, Koutarou;Krieger, Michael;Kimoto, Tsunenobu
在这项研究中，作者研究了深能级，这是由反应离子刻蚀（RIE）的n型/p型4 H-SiC，深能级瞬态谱（DLTS）。由于延伸到接近14 μ m深度的受主的补偿或失活，在蚀刻的p型SiC上制造的肖特基接触的电容异常小，该深度几乎等于外延层厚度。在1000 ℃退火后，电容值可以恢复到生长态样品上肖特基接触的电容值。然而，各种缺陷，IN 2（E-C-0.30 eV），EN（E-C-1.6 eV），IP1（E-V+0.30 eV），IP2（E-V+0.39 eV），IP4（HK0：E-V+0.72 eV），IP5（E-V+0.85 eV），IP7（E-V+1.3 eV），和EP（E-V+1.4 eV），保持在高浓度（在0.3 μ m至1.0 μ m范围内的总缺陷浓度的平均值：类似于5 × 10（14）cm（-3））。所有这些由RIE产生的缺陷的浓度，除了IP 4（HK 0）中心，显着降低热氧化。此外，HK 0中心也可以通过随后在Ar中在1400摄氏度下退火而显著减少。(C)2010年美国物理学会。[doi：10.1063/1.3460636]
In this study, the authors investigate deep levels, which are induced by reactive ion etching (RIE) of n-type/p-type 4H-SiC, by deep level transient spectroscopy (DLTS). The capacitance of a Schottky contact fabricated on as-etched p-type SiC is abnormally small due to compensation or deactivation of acceptors extending to a depth of similar to 14 mu m, which is nearly equal to the epilayer thickness. The value of the capacitance can recover to that of a Schottky contact on as-grown samples after annealing at 1000 degrees C. However, various kinds of defects, IN2 (E-C-0.30 eV), EN (E-C-1.6 eV), IP1 (E-V+0.30 eV), IP2 (E-V+0.39 eV), IP4 (HK0: E-V+0.72 eV), IP5 (E-V+0.85 eV), IP7 (E-V+1.3 eV), and EP (E-V+1.4 eV), remain at a high concentration (average of total defect concentration in the region ranging from 0.3 mu m to 1.0 mu m: similar to 5 x 10(14) cm(-3)) even after annealing at 1000 degrees C. The concentration of all these defects generated by RIE, except for the IP4 (HK0) center, remarkably decreases by thermal oxidation. In addition, the HK0 center can also be reduced significantly by a subsequent annealing at 1400 degrees C in Ar. (C) 2010 American Institute of Physics. [doi:10.1063/1.3460636]