"Double-W-shaped" temperature dependence of emission linewidth in an InGaN/GaN multiple quantum well structure with intense phase separation
"Double-W-shaped" temperature dependence of emission linewidth in an InGaN/GaN multiple quantum well structure with intense phase separation
复制标题
具有强烈相分离的 InGaN/GaN 多量子阱结构中发射线宽的“双 W 形”温度依赖性
DOI：
10.1166/mex.2020.1611
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发表时间：
2020
影响因子：
0.7
通讯作者：
Xu Xiangang
中科院分区：
文献类型：
--
作者：
Li Changfu;Xu Mingsheng;Ji Ziwu;Shi Kaiju;Li Hongbin;Wei Yehui;Xu Xiangang
研究了较低激发功率下蓝色InGaN/GaN多量子阱（MQW）结构光致发光（PL）光谱的温度依赖性。两个与InGaN相关的发射峰分别归属于富含in的准量子点（QDs）和InGaN矩阵
The temperature dependence of the spectra of photoluminescence (PL) from a blue InGaN/GaN multiplequantum-well (MQW) structure is investigated at lower excitation power. Two emission peaks, related to InGaN and assigned to In-rich quasi-quantum dots (QDs) and InGaN-matrix in the full
PL spectrum, were observed. Upon increasing the temperature, both PL peak linewidths exhibited "double-W-shaped" (narrowing–broadening–narrowing–broadening–narrowing–broadening) temperature dependence. Combined with the observed features of the temperature dependences
of the PL intensities, the temperature-dependent behaviors in this case can be interpreted as the relaxation and thermalization of carriers inside respective phase structures and the transfer of carriers between two phase structures, because of the strong phase separation and significant component
fluctuation in the InGaN well layers.