Long-term durable silicon photocathode protected by a thin Al2O3/SiOx layer for photoelectrochemical hydrogen evolution
Long-term durable silicon photocathode protected by a thin Al2O3/SiOx layer for photoelectrochemical hydrogen evolution
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DOI：
10.1039/c3ta14443g
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发表时间：
2014-01-01
影响因子：
11.9
通讯作者：
Bang, Jin Ho
中科院分区：
文献类型：
--
作者：
Choi, Mi Jin;Jung, Jin-Young;Bang, Jin Ho
长期稳定地产生H-2对p-Si光电阴极至关重要。然而，随着时间的推移，Si光电极的氧化显著劣化其性能。这项研究表明，薄的Al 2 O3层沉积在Si上，可以防止氧化，也降低过电位，通过表面钝化效应。
The long-term steady production of H-2 is vital for p-Si photocathodes. However, the oxidation of a Si photoelectrode substantially deteriorates its performance, over time. This study demonstrates that a thin Al2O3 layer deposited over the Si can prevent oxidation and also reduce overpotential, via a surface passivation effect.