Terahertz spectroscopy on hole transport in pentacene thin films
Terahertz spectroscopy on hole transport in pentacene thin films
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DOI：
10.1063/1.4887237
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发表时间：
2014-07-07
影响因子：
4
通讯作者：
Kersting, R.
中科院分区：
文献类型：
--
作者：
Engelbrecht, S. G.;Prinz, M.;Kersting, R.
利用太赫兹电调制光谱研究了并五苯薄膜中的电荷输运。虽然该材料是高度多晶的，但发现空穴迁移率约为20 cm（2）/Vs，其超过DC测量中获得的迁移率几个数量级。高AC迁移率是由电荷载流子的运动引起的，其不受晶界阻碍。导出并五苯空穴电导有效质量的上限m（h）* 约为0.8m（e）。(C)2014 AIP Publishing LLC.
Charge transport in pentacene thin films is investigated using terahertz electromodulation spectroscopy. Although the material is highly polycrystalline, a hole mobility of about 20 cm(2)/Vs is found, which exceeds the mobility obtained in DC measurements by orders of magnitude. The high AC mobility results from a motion of charge carriers, which is not hindered by grain boundaries. An upper limit of m(h)* approximate to 0.8 m(e) is deduced for the conductivity effective mass of holes in pentacene. (C) 2014 AIP Publishing LLC.