Absorption edge of silicon from solar cell spectral response measurements
Absorption edge of silicon from solar cell spectral response measurements
复制标题
太阳能电池光谱响应测量中硅的吸收边
DOI：
10.1063/1.113125
复制
发表时间：
1995
影响因子：
4
通讯作者：
M. Green
中科院分区：
文献类型：
--
作者：
M. Keevers;M. Green
通过对高效硅太阳能电池进行灵敏的光电流测量，可以确定晶体硅在带边附近的光吸收系数低至10 − 7 cm − 1。观察到由于三声子和四声子辅助吸收过程的结构。解决了文献中报道的10 − 2 cm − 1附近吸收系数值之间的差异。无序理论在理解晶体半导体如硅的吸收边的作用进行了讨论。
The optical absorption coefficient of crystalline silicon near the band edge is determined to values as low as 10−7 cm−1 by sensitive photocurrent measurements on high efficiency silicon solar cells. Structure due to three‐ and four‐phonon assisted absorption processes is observed. Discrepancies between absorption coefficient values around 10−2 cm−1 reported in the literature are resolved. The role of disorder theory in understanding the absorption edge of crystalline semiconductors such as silicon is discussed.