Ultraviolet photoluminescence from nonbridging oxygen hole centers in porous silica
Ultraviolet photoluminescence from nonbridging oxygen hole centers in porous silica
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DOI：
10.1063/1.1339844
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发表时间：
2001-01
影响因子：
4
通讯作者：
B. Yao;H. Shi;Xinyi Zhang;Lide Zhang
中科院分区：
文献类型：
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作者：
B. Yao;H. Shi;Xinyi Zhang;Lide Zhang
在这篇文章中，我们报道了用溶胶-凝胶法制备的多孔二氧化硅在330 nm左右的紫外（UV）光致发光（PL）的观察。经过后处理导致OH吸附，观察到的UV PL发射强度显着增加。结果表明，这种行为与吸附在多孔二氧化硅表面的羟基的增加有关。我们认为观察到的紫外光发光来自于表面羟基产生的非桥氧空穴中心。结合非桥氧中心电荷修饰模型和含水SiO2网络的振动吸收，初步阐述了紫外光发光的机理。
In this letter, we report the observation of an ultraviolet (UV) photoluminescence (PL) emission at around 330 nm in porous silica prepared by the sol–gel process. Upon a posttreatment which leads to OH adsorption, the intensity of the observed UV PL emission increases significantly. It is shown that this behavior is associated with the increase of OH groups adsorbed on the surface of porous silica. We suggest that the observed UV PL emission originates from the nonbridging oxygen hole centers generated from surface hydroxyls. The mechanism of the UV PL emission is expressed tentatively by combining the nonbridging oxygen centers charge modification model and the vibrative absorption of a SiO2 network containing water.