SnS Homojunction Solar Cell with n‐Type Single Crystal and p‐Type Thin Film
SnS Homojunction Solar Cell with n‐Type Single Crystal and p‐Type Thin Film
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n型单晶和p型薄膜SnS同质结太阳能电池
DOI：
10.1002/solr.202000708
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发表时间：
2021
期刊：
影响因子：
7.9
通讯作者：
Omata Takahisa
中科院分区：
文献类型：
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作者：
Kawanishi Sakiko;Suzuki Issei;Bauers Sage R.;Zakutayev Andriy;Shibata Hiroyuki;Yanagi Hiroshi;Omata Takahisa
在此，首次通过在最近报道的大的n型SnS单晶上沉积p型SnS多晶薄膜来制造pn同质结SnS太阳能电池。p型薄膜由沿着<100>与n型单晶相同的取向沿着生长的柱状晶粒构成。此外，pn同质结的界面是无空隙的并且在组成上是尖锐的。SnS同质结太阳能电池实现了360 mV的开路电压（VOC），这与先前报道的SnS基异质结太阳能电池的最高VOC一样大。同质结电池的内建电势为0.92 eV，接近SnS的带隙能量（0.11eV），并且大于异质结的报道的带隙能量（0.7eV）。同质结太阳能电池的转换效率（η）为1.4%，低于异质结太阳能电池的4-5%，这主要是由于7.5 mA cm−2的低短路电流密度（JSC）。一旦同质结电池的器件结构被优化以有效地收集光生载流子并实现与传统异质结电池相当的JSC（~ 25 mA cm-2），则将实现超过4-5%的高η，同时改善VOC。
Herein, a pn homojunction SnS solar cell is fabricated for the first time by the deposition of p‐type SnS polycrystalline thin films on the recently reported large n‐type SnS single crystals. The p‐type thin films consist of columnar grains that grow along the <100> direction, which is the same orientation as the n‐type single crystal. In addition, the interface of the pn homojunctions is void‐free and compositionally sharp. The SnS homojunction solar cell achieves an open‐circuit voltage (VOC) of 360 mV, which is as large as the highestVOCof previously reported SnS‐based heterojunction solar cells. The built‐in potential of the homojunction cell is 0.92 eV, which is close to the bandgap energy of SnS (≈1.1 eV), and larger than reported for heterojunctions (≈0.7 eV). The resulting 1.4% conversion efficiency (η) of the homojunction solar cell is smaller than the record 4–5% in heterojunctions, mainly due to the low short‐circuit current density (JSC) of 7.5 mA cm−2. Once the device structure of the homojunction cell is optimized to efficiently collect the photogenerated carriers and achieve a comparableJSCas the conventional heterojunction cells (≈25 mA cm−2), highηexceeding 4–5% will be realized with improving theVOC.