Improvement in resistive switching of Ba-doped BiFeO3 films
Improvement in resistive switching of Ba-doped BiFeO3 films
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DOI：
10.1063/1.4813551
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发表时间：
2013-07
影响因子：
4
通讯作者：
M. Vagadia;A. Ravalia;P. Solanki;R. Choudhary;D. Phase;D. G. Kuberkar
中科院分区：
文献类型：
--
作者：
M. Vagadia;A. Ravalia;P. Solanki;R. Choudhary;D. Phase;D. G. Kuberkar
我们研究了在单晶 SrTi0.99Nb0.01O3 衬底上生长的 Ba 掺杂 BiFeO3 (BBFO) 薄膜的电阻开关行为。 BBFO 薄膜中类似二极管 I-V 行为的观察以及 VC 随 Ba 含量的降低已在其能带图修改的背景下得到理解。此外，I-V 曲线表现出滞后现象，这已根据现场条件下氧空位的迁移和重组进行了解释。此外，Ba含量的增加提高了BFO薄膜的保持性能和ON/OFF开关比，这使得它们适合开关器件的应用。
We investigate the resistive switching behavior of Ba-doped BiFeO3 (BBFO) films grown on single crystalline SrTi0.99Nb0.01O3 substrates. Observation of diode like I-V behavior and reduction in VC with Ba-content in BBFO films have been understood in the context of modifications in its energy band diagram. Also, I-V curves exhibit hysteresis which has been explained on the basis of migration and recombination of oxygen vacancies under field conditions. Furthermore, increment in Ba-content improves the retention property and ON/OFF switching ratio in BFO films which makes them suitable for applications in switching devices.