Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens
Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens
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DOI：
10.1063/5.0085257
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发表时间：
2022-02
影响因子：
4
通讯作者：
S. Bishop;J. Hadden;R. Hekmati;J. K. Cannon;W. Langbein;A. Bennett
中科院分区：
文献类型：
--
作者：
S. Bishop;J. Hadden;R. Hekmati;J. K. Cannon;W. Langbein;A. Bennett
在宽带隙化合物半导体中，氮化镓是最广泛可用的材料，因为其在固态照明和高速/大功率电子工业中的流行。现在已知GaN是少数几种在室温下发射量子光的色心材料之一。在本文中，我们报道了一个明亮的色心在半极性氮化镓衬底在室温下发射近红外。我们发现，半球形的固体浸没透镜，近折射率匹配的半导体，可以用来提高光子收集效率的4.3 ± 0.1倍，同时提高横向分辨率的一个因素等于的透镜的折射率。
Among wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon collection efficiency by a factor of 4.3 ± 0.1 while improving the lateral resolution by a factor equal to the refractive index of the lens.