Growth mechanism of Si-faceted dendrites.
Growth mechanism of Si-faceted dendrites.
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DOI：
10.1103/physrevlett.101.055503
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发表时间：
2008-07
影响因子：
8.6
通讯作者：
K. Fujiwara;K. Maeda;N. Usami;K. Nakajima
中科院分区：
文献类型：
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作者：
K. Fujiwara;K. Maeda;N. Usami;K. Nakajima
用原位观察技术研究了硅面枝晶的生长机制。我们直接观察到了硅熔体中硅面枝晶的生长过程。结果表明，在枝晶尖端形成了60度角的三角形拐角。我们在实验证据的基础上提出了刻面枝晶的原始生长模型。该模型充分解释了刻面枝晶的生长过程。
The growth mechanism of Si-faceted dendrite was studied using an in situ observational technique. We directly observed the growth processes of Si-faceted dendrites from Si melts. It is found that triangular corners with an angle of 60 degrees are formed at the dendrite tip. We present an original growth model for faceted dendrites based on the experimental evidence. The model fully explains the growth process of faceted dendrites.