Modeling of multiple-quantum-well solar cells including capture, escape, and recombination of photoexcited carriers in quantum wells
Modeling of multiple-quantum-well solar cells including capture, escape, and recombination of photoexcited carriers in quantum wells
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DOI：
10.1109/ted.2003.813475
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发表时间：
2003-05-01
影响因子：
3.1
通讯作者：
Khoie, R
中科院分区：
文献类型：
--
作者：
Ramey, SM;Khoie, R
描述了一种用于模拟多量子阱（MQW）AlxGa 1-xAs-GaAs太阳电池的自洽Poisson-Schrodinger漂移扩散求解器。在p-i-n器件的本征区中嵌入的量子威尔斯中的光激发载流子的逃逸、捕获和复合的速率自洽地并入模型中。研究了不同量子阱结构下的器件性能，器件特性与量子威尔斯中载流子的捕获、逃逸、吸收和复合动力学有关，结果表明，在p-i-n太阳能电池本征区引入多量子阱可以提高非最佳器件的转换效率，如果器件是基于对量子威尔斯中光激发载流子的行为的仔细考虑而设计的。具体地，我们发现具有150 A的多个量子威尔斯的Al 0. 1Ga 0.9As-GaAs电池比没有量子威尔斯的相同的单带隙Al 0. 1Ga 0. 9As电池更有效，但是比没有这样的量子威尔斯的单带隙GaAs电池效率低。
A self-consistent numerical Poisson-Schrodinger-drift-diffusion solver is described for simulation of multiple-quantum-well (MQW) AlxGa1-xAs-GaAs solar cells. The rates of escape, capture, and recombination of photoexcited carriers in quantum wells embedded in the intrinsic region of a p-i-n device are self-consistently incorporated in the model. The performance of the device for various quantum-well configurations is investigated and the device characteristics are related to the dynamics of capture, escape, absorption, and recombination of carriers in the quantum wells.Our results show that the incorporation of MQWs in the intrinsic region of a p-i-n solar cell can improve the conversion efficiency of non-optimal devices, if the device is designed based on careful consideration of the behavior of the photoexcited carriers in the quantum wells. Specifically, we found out that an Al0.1Ga0.9As-GaAs cell with multiple quantum wells of 150 A is more efficient than an identical single bandgap Al0.1Ga0.9As cell with no quantum wells, but less efficient than a single bandgap GaAs cell without such quantum wells.