Valence and conduction band offsets of β-Ga2O3/AlN heterojunction
Valence and conduction band offsets of β-Ga2O3/AlN heterojunction
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DOI：
10.1063/1.5003930
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发表时间：
2017-10
影响因子：
4
通讯作者：
Haiding Sun;C. Castanedo;Kaikai Liu;Kuang-Hui Li;Wenzhe Guo;Ronghui Lin;Xinwei Liu;Jingtao Li-
中科院分区：
文献类型：
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作者：
Haiding Sun;C. Castanedo;Kaikai Liu;Kuang-Hui Li;Wenzhe Guo;Ronghui Lin;Xinwei Liu;Jingtao Li-
β-Ga_2O_3和纤锌矿型AlN的禁带宽度分别为4.5-4.9和6.1 eV。我们计算了β-Ga 2 O3的（−201）面和AlN的（0002）面之间的面内晶格失配，发现其为2.4%。这是β-Ga_2 O_3和二元III族氮化物之间的最小失配，这有利于形成高质量的β-Ga_2 O_3/AlN异质结。然而，β-Ga 2 O3/AlN异质结的价带和导带偏移（VBO和CBO）尚未被确定。在本研究中，一个非常薄的（小于2 nm）β-Ga 2 O3层沉积在AlN/蓝宝石模板形成异质结的脉冲激光沉积。高分辨X射线光电子能谱（XPS）分别测定了β-Ga 2 O3和AlN层中Ga 3d和Al 2 p相对于价带顶的芯能级（CL）结合能。测量了β-Ga_2O_3/AlN界面Ga 3d和Al 2 p CLs的分离。最终，VBO被发现为−0.55 ± 0.05 eV。Conclusion...
Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be −0.55 ± 0.05 eV. Consequent...