Sic semiconductor device
Sic semiconductor device
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碳化硅半导体器件
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
유스케 후쿠다
中科院分区：
文献类型：
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作者：
겐이치 노나카;고이치 니시카와;유스케 마에야마;마사시 사토오;마사아키 시미즈;히로아키 이와쿠로;유스케 후쿠다
本发明的半导体器件包括：钝化膜;第一半导体层，其具有第一主成分中的第一导电类型的4 H-SiC;以及第一和第二半导体层，其具有第二主成分中的第二导电类型的4 H-SiC。第二半导体层与第一半导体层具有pn结。这将为pn结提供一个接合边.第一半导体层和第二半导体层还包括包含接合边缘的局部区域。局部区域具有形成钝化膜和界面的第一主平面。所述倾斜面朝向一周垂直于所述第一轴线的平面的倾斜角度在25至45 [000 - 1]或[000-1]的范围内，第二轴线在第一轴线的范围内。
Semiconductor device of the present invention, a passivation film; A first semiconductor layer having a 4H-SiC of a first conductivity type to a first principal component and; First and a second semiconductor layer of a 4H-SiC of the second conductivity type in the second principal component. The second semiconductor layer has a pn- junction with the first semiconductor layer. This will be pn- junction is provided with a joint edge. First and second semiconductor layer further includes a local area including the joining edge. The local area is provided with a first main plane forming the passivation film and the interface. The inclined towards one weeks normal to the plane of the first inclination angle in the range 25 to 45 [0001] or [000-1] a second axis in a first axis of.