Ductile and high strength Cu fabricated by solid-state cold spray additive manufacturing
Ductile and high strength Cu fabricated by solid-state cold spray additive manufacturing
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DOI：
10.1016/j.jmst.2022.07.003
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发表时间：
2022-08-02
影响因子：
10.9
通讯作者：
Ren, Zhongming
中科院分区：
文献类型：
--
作者：
Chen, Chaoyue;Xie, Yingchun;Ren, Zhongming
本文采用冷喷涂增材制造技术（CSAM）制备了具有优异强度和塑性（抗拉强度271 MPa，断裂伸长率43.5%，均匀延伸率30%）的纯铜，实现了该领域的突破。对CSAM Cu及单个板条的组织演变、强化和塑性化机制进行了深入研究。结果表明，CSAM Cu具有独特的非均匀组织，具有双峰晶粒结构和广泛的无限循环环式孪晶分布。基于单次溅射观察，整个铜颗粒在高速冲击沉积后形成梯度纳米晶（GNG）结构。在连续沉积过程中，GNG结构的单个片状物作为一个单元建立了具有双峰晶粒分布的非均匀组织。CSAM通过控制晶粒细化和位错密度，实现协同强化和塑性化。这项工作为CSAM技术在制造具有高强度和良好延展性的各种金属部件而无需额外的后处理提供了潜力。(c)2022由Elsevier Ltd代表Journal of Materials Science & Technology编辑部出版。
In this work, pure Cu with excellent strength and ductility (UTS of 271 MPa, elongation to fracture of 43.5%, uniform elongation of 30%) was prepared using cold spray additive manufacturing (CSAM), real-izing a breakthrough in the field. An in-depth investigation was conducted to reveal the microstructure evolution, strengthening and ductilization mechanisms of the CSAM Cu, as well as the single splats. The results show that the CSAM Cu possesses a unique heterogeneous microstructure with a bimodal grain structure and extensive infinitely circulating ring-mounted distribution of twinning. Based on the single splat observation, the entire copper particle forms a gradient nano-grained (GNG) structure after high-speed impact deposition. The GNG-structured single splat serves as a unit to build the heterogeneous microstructure with bimodal grain distribution during the successive deposition in CSAM. The results also show that CSAM can achieve synergistic strengthening and ductilization by controlling the grain refine-ment and dislocation density. This work provides potential for CSAM technique in manufacturing various metallic parts with the desired combination of high strength and good ductility without additional post -treatments. (c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.