Boron nitride nanowalls: low-temperature plasma-enhanced chemical vapor deposition synthesis and optical properties
Boron nitride nanowalls: low-temperature plasma-enhanced chemical vapor deposition synthesis and optical properties
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DOI：
10.1088/1361-6528/aa677b
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发表时间：
2017-04
期刊：
影响因子：
3.5
通讯作者：
I. Merenkov;M. Kosinova;E. A. Maximovskii
中科院分区：
文献类型：
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作者：
I. Merenkov;M. Kosinova;E. A. Maximovskii
采用等离子体增强化学气相沉积（PECVD）技术，以硼氮烷（B3 N3 H6）和氨气（NH3）为原料，在400 °C ~ 600 °C的低温下，在GaAs（100）衬底上制备了六方氮化硼（h-BN）单晶。研究了合成温度对h-BN薄膜结构和表面形貌的影响。h-BN单晶的长度和厚度分别为50-200 nm和15-30 nm。透射电子显微镜图像显示，所制备的BNNW由尺寸为5-10 nm的层状非等轴h-BN纳米晶组成。在薄膜和GaAs（100）衬底之间观察到作为界面层的平行排列的h-BN层。BNNW在可见光和红外光谱区都表现出强的蓝光发射，高透明度（>90%），并且在光学应用中很有前途。目前的结果使BNNW在低温下方便的生长。
Hexagonal boron nitride (h-BN) nanowalls (BNNWs) were synthesized by plasma-enhanced chemical vapor deposition (PECVD) from a borazine (B3N3H6) and ammonia (NH3) gas mixture at a low temperature range of 400 °C–600 °C on GaAs(100) substrates. The effect of the synthesis temperature on the structure and surface morphology of h-BN films was investigated. The length and thickness of the h-BN nanowalls were in the ranges of 50–200 nm and 15–30 nm, respectively. Transmission electron microscope images showed the obtained BNNWs were composed of layered non-equiaxed h-BN nanocrystallites 5–10 nm in size. The parallel-aligned h-BN layers as an interfacial layer were observed between the film and GaAs(100) substrate. BNNWs demonstrate strong blue light emission, high transparency (>90%) both in visible and infrared spectral regions and are promising for optical applications. The present results enable a convenient growth of BNNWs at low temperatures.