Nanocolumnar ZnO films for photovoltaic applications
Nanocolumnar ZnO films for photovoltaic applications
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DOI：
10.1016/j.tsf.2003.10.119
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发表时间：
2004-03-22
期刊：
影响因子：
2.1
通讯作者：
Marí, B
中科院分区：
文献类型：
--
作者：
Cembrero, J;Elmanouni, A;Marí, B
氧化锌（ZnO）是一种宽禁带半导体，如果以纳米结构形式生长，适合用于光伏应用，可作为一种增大太阳能电池活性部分的方法。织构化衬底的增大表面的空隙可以用薄吸收层填充。这种集光器件的主要优点是所需的电子传输距离短，这降低了对大扩散长度的要求。通过在多晶导电玻璃和单晶氮化镓衬底上进行电沉积获得了结晶氧化锌纳米柱。氧化锌柱的尺寸和表面积与体积之比主要取决于生长参数，例如电流密度、沉积时间和镀液温度。在不同条件下生长的氧化锌柱中观察到的强烈紫外光致发光主要取决于退火后处理。（C）2003爱思唯尔公司。版权所有。
Zinc oxide (ZnO) is a wide gap semiconductor that if grown under nanostructured form, is suitable for photovoltaic applications as a way to enlarge the active part of a solar cell. Voids of enlarged surfaces of textured substrates can be filled with a thin absorber. The main advantage of such light-collecting devices is the short electronic transport distance needed which reduces the requirement of large diffusion lengths. Crystalline ZnO nanocolumns were obtained by electrodeposition on polycrystalline conductive glass and on monocrystalline GaN substrates. Sizes and surface-volume ratios of the ZnO columns depend mainly on the growth parameters such as current density, deposition time and temperature of the bath. The intense ultraviolet photoluminescence emission observed in ZnO columns grown under different conditions depends mainly on post-annealing treatment. (C) 2003 Elsevier B.V. All rights reserved.