Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method
Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method
复制标题
氢分压对射频磁控溅射法沉积氧化铟锡薄膜光电性能的影响
DOI：
10.1063/1.370834
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发表时间：
1999
影响因子：
3.2
通讯作者：
A. Wee
中科院分区：
文献类型：
--
作者：
Keran Zhang;F. Zhu;C. Huan;A. Wee
在这项研究中，铟锡氧化物（ITO）薄膜的氧化靶与In 2 O3和SnO 2的重量比为9：1，使用射频磁控溅射法。在ITO膜的制备过程中向气体混合物中加入氢气。为了研究氢分压对ITO薄膜的结构和光电性能的影响，我们在0-1.6×10 - 5 Torr的范围内改变了混合气体中的氢分压，并在薄膜生长期间保持衬底温度恒定在300 °C。 在不同氢分压下制备的ITO薄膜的X射线衍射图表明，薄膜具有（111）和（100）择优取向。霍尔效应测量表明，在溅射气体混合物中添加氢气显示出ITO膜中的带电载流子的数量增加。然而，载流子迁移率并没有显著增加。在最佳工艺条件下，ITO薄膜的电阻率为2.7×10−4 Ω cm，透明性为2.5 × 10−4 Ω cm。
In this study, indium tin oxide (ITO) films were made from an oxidized target with In2O3 and SnO2 in a weight proportion of 9:1 using the radio frequency magnetron sputtering method. Hydrogen was added to the gas mixture during the preparation of the ITO films. In order to study the effect of hydrogen partial pressure on the structural and optoelectronic properties of the ITO films, we have varied the hydrogen partial pressure in the gas mixture over the range 0–1.6×10−5 Torr and kept the substrate temperature constant at 300 °C during film growth. The x-ray diffraction patterns of ITO films prepared at different hydrogen partial pressures show that the films have (111) and (100) preferred orientations. Hall effect measurements reveal that the addition of hydrogen in the sputtering gas mixture shows an increase in the number of charged carriers in the ITO films. However the carrier mobility did not increase considerably. At optimal conditions, ITO films with resistivity of 2.7×10−4 Ω cm and transparency o...