Demonstration of conductivity modulation in SiC bipolar junction transistors with reduced base spreading resistance
Demonstration of conductivity modulation in SiC bipolar junction transistors with reduced base spreading resistance
复制标题
具有降低基极扩展电阻的 SiC 双极结晶体管的电导率调制演示
DOI：
10.1109/ted.2019.2941884
复制
发表时间：
2019
影响因子：
3.1
通讯作者：
and T. Kimoto
中科院分区：
文献类型：
--
作者：
S. Asada;J. Suda;and T. Kimoto
基于我们先前研究中提出的设计准则，制作了SiC双极结型晶体管（BJT），定量地证明了降低基区扩展电阻的重要性。为了降低基区扩展电阻，在寄生基区进行Al+注入。当注入距离发射极梅萨侧壁足够远时（距离大于3 μm），注入损伤对电流增益没有负面影响。由于制造的BJT满足设计标准，实现了明确的电导率调制，从而降低了集电极电阻，即单极电阻的50%。此外，我们还通过实验证明了降低基区扩展电阻可以增强SiC BJT的电导调制。
SiC bipolar junction transistors (BJTs) were fabricated based on the design criterion proposed in our previous study, which quantitatively proved the importance of decreasing a base spreading resistance. To reduce the base spreading resistance,Al+-implantation was performed in the parasitic base region. No negative influences due to the implantation damage on the current gain were confirmed when the implantation is performed sufficiently apart from the emitter mesa sidewall, the distance of which is longer than 3 μm. Since the fabricated BJTs satisfied the design criterion, clear conductivity modulation was achieved, resulting in a reduced collector-resistance, that is, 50% of the unipolar resistance. In addition, we experimentally demonstrated that the conductivity modulation in SiC BJTs could be enhanced by decreasing the base spreading resistance.