Sintering and dielectric properties of Al2O3 ceramics doped by TiO2 and CuO
Sintering and dielectric properties of Al2O3 ceramics doped by TiO2 and CuO
复制标题
DOI：
10.1007/s10832-007-9028-3
复制
发表时间：
2007-02
影响因子：
1.7
通讯作者：
Qilong Zhang;Hui Yang;Jia-Li Zou;Hui Sun
中科院分区：
文献类型：
--
作者：
Qilong Zhang;Hui Yang;Jia-Li Zou;Hui Sun
研究了CuO和TiO 2添加剂对Al 2 O3陶瓷显微结构和微波介电性能的影响。添加CuO和TiO 2的Al 2 O3陶瓷由于Ti4 Cu 2 O的液相烧结效应，在1,360 °C以下可以很好地烧结，达到93 ~ 98%的理论密度。由于第二相Ti4 Cu 2 O的形成，Qf值随CuO和TiO 2含量的增加而降低。而介电常数和温度系数的变化行为与相组成有关，是CuO和TiO 2含量变化的结果。通过控制CuO和TiO 2的含量，τ f可以移动到接近0 ppm/°C。具有0.5重量%的样品CuO和7重量%在1，360 °C下烧结4 h的TiO 2显示出11.8的介电常数，30，000 GHz的Qf值和−7 ppm/°C的τ f值。
The effects of CuO and TiO2additives on the microstructure and microwave dielectric properties of Al2O3ceramics were investigated. Al2O3ceramics with CuO and TiO2additions can be well sintered to achieve 93∼98% theoretical densities below 1,360 °C due to Ti4Cu2O liquid phase sintering effect. TheQfvalues decreased with increasing CuO and TiO2content, due to the formation of the second phase Ti4Cu2O. However, the varying behaviors of the dielectric constant (ɛr) and temperature coefficients (τf) were associated with phase constitutions, as a result of the change of CuO and TiO2content. The τfcan be shifted close to 0 ppm/°C by controlling the content of CuO and TiO2. The specimens with 0.5 wt.% CuO and 7 wt.% TiO2sintered at 1,360 °C for 4 h showedɛrof 11.8,Qfvalue of 30,000 GHz, and τfof −7 ppm/°C.