AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode
AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode
复制标题
DOI：
10.1109/led.2009.2026437
复制
发表时间：
2009-09-01
影响因子：
4.9
通讯作者：
Traenkle, Guenther
中科院分区：
文献类型：
--
作者：
Bahat-Treidel, Eldad;Lossy, Richard;Traenkle, Guenther
我们推出了一种 AlGaN/GaN 高电子迁移率晶体管 (HEMT)，在晶体管沟道的漏极侧集成了嵌入式保护二极管。我们的肖特基漏极 HEMT 的结果表明，整个器件具有出色的反向阻断能力，并且在导通状态电阻方面有较小的折衷。正向二极管特性的优异品质表明了凹陷工艺的高稳健性。二极管的反向阻断能力优于 -110 V。基于物理的器件模拟可以深入了解相应的电子机制。这是首次将嵌入式肖特基漏极二极管集成到 HEMT 器件中。
We present an AlGaN/GaN high-electron mobility transistor (HEMT) with an integrated recessed protection diode on the drain side of the transistor channel. Results from our Schottky-drain HEMT demonstrate an excellent reverse blocking with minor tradeoff in the ON-state resistance for the complete device. The excellent quality of the forward diode characteristics indicates high robustness of the recess process. The reverse blocking capability of the diode is better than -110 V. Physical-based device simulations give an insight in the respective electronic mechanisms. This is the first time that a recessed Schottky-drain diode integrated in a HEMT device is presented.